Zxmn2amc, Maximum ratings, Thermal characteristics – Diodes ZXMN2AMC User Manual
Page 2
ZXMN2AMC
Document number: DS35089 Rev. 1 - 2
2 of 8
December 2010
© Diodes Incorporated
ZXMN2AMC
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±12
Continuous Drain Current
V
GS
= 4.5V
(Notes 4 & 7)
I
D
3.7
A
T
A
= 70°C (Notes 4 & 7)
3.0
(Notes 3 & 7)
2.9
Pulsed Drain Current
V
GS
= 4.5V
(Notes 6 & 7)
I
DM
13
Continuous Source Current (Body diode)
(Notes 4 & 7)
I
S
3.0
Pulse Source Current (Body diode)
(Notes 6 & 7)
I
SM
13
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 3 & 7)
P
D
1.50
12
W
mW/°C
(Notes 4 & 7)
2.45
19.6
(Notes 5 & 7)
1.13
9
(Notes 5 & 8)
1.70
13.6
Thermal Resistance, Junction to Ambient
(Notes 3 & 7)
R
θJA
83.3
°C/W
(Notes 4 & 7)
51.0
(Notes 5 & 7)
111
(Notes 5 & 8)
73.5
Thermal Resistance, Junction to Lead
(Notes 7 & 9)
R
θJL
17.1
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Notes:
3. For a device surface mounted on 28mm x 28mm (8 sq cm) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10 sq cm) FR4 PCB with high coverage of single sided 1oz copper.
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).