Zxmn2a14f – Diodes ZXMN2A14F User Manual
Page 4

ZXMN2A14F
S E M I C O N D U C T O R S
ISSUE 3 - SEPTEMBER 2007
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
Ϯ12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
=250
A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.060
0.110
⍀
⍀
V
GS
=4.5V, I
D
=3.4A
V
GS
=2.5V, I
D
=2.5A
Forward Transconductance
(1) (3)
g
fs
9.4
S
V
DS
=10V,I
D
=3.4A
DYNAMIC
(3)
Input Capacitance
C
iss
544
pF
V
DS
= 10V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
132
pF
Reverse Transfer Capacitance
C
rss
85
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.0
ns
V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
≅
6.0
⍀
Rise Time
t
r
5.3
ns
Turn-Off Delay Time
t
d(off)
16.6
ns
Fall Time
t
f
9.5
ns
Total Gate Charge
Q
g
6.6
nC
V
DS
=10V,V
GS
= 4.5V,
I
D
=3.4A
Gate-Source Charge
Q
gs
1.2
nC
Gate-Drain Charge
Q
gd
2.1
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85
0.95
V
T
J
=25°C, I
S
=(3.3)A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
11.4
ns
T
J
=25°C, I
F
=(1.7)A,
di/dt= 100A/
s
Reverse Recovery Charge
(3)
Q
rr
4.6
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.