Diodes ZXMD63N02X - Manual (Page 4)

ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
4 of 8
www.diodes.com
June 2012
© Diodes Incorporated
ZXMD63N02X
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - 1.0 µA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.7 - 3 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 11) R
DS (ON)
-
65 130
m Ω
V
GS
= 4.5V, I
D
= 1.7A
90 150 V GS = 2.7V, I D = 0.85A
Forward Transconductance (Notes 11 & 13) g
fs
2.6 - - S V
DS
= 10V, I
D
= 0.85A
Diodes Forward Voltage (Note 11) V
SD
- 0.85 0.95 V T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 12 & 13)
C
iss
- 350 700
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance (Notes 12 & 13) C
oss
- 120 250
Reverse Transfer Capacitance (Notes 12 & 13) C rss
- 50 100
Gate Resistance (Notes 12 & 13) R
g
- 3.8 7.6 Ω f = 1MHz, V
GS
= 0V, V
DS
= 0V
Total Gate Charge (Notes 12 & 13) Q
g
- 4.5 6
nC
V
GS
= 4.5V, V
DS
= 16V,
I D = 1.7A
Gate-Source Charge (Notes 12 & 13) Q
gs
- 0.5 0.65
Gate-Drain Charge (Notes 12 & 13) Q
gd
- 2 2.5
Reverse Recovery Time (Note 13) t
rr
- 15 30 ns T
J
= +25°C, I
F
= 1.7A,
di/dt = 100A/µs Reverse Recovery Charge (Note 13) Q
rr
- 5.9 - nC
Turn-On Delay Time (Notes 12 & 13) t D(on)
- 3.4 -
ns
V DD = 10V, I D = 1.7A,
R G = 6 Ω, R
D = 5.7 Ω,
Turn-On Rise Time (Notes 12 & 13) t
r
- 8.1 -
Turn-Off Delay Time (Notes 12 & 13) t
D(off)
- 13.5 -
Turn-Off Fall Time (Notes 12 & 13) t f
- 9.1 -
Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
12. Switching characteristics are independent of operating junction temperature.
13. For design aid only, not subject to production testing.