Diodes ZXMN2A03E6 - Manual (Page 4)

ZXMN2A03E6
ISSUE 4 - SEPTEMBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 1 ␮A VDS=20V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=Ϯ12V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 0.7 V I
D
=250 µA, VDS= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.055
0.100 ⍀
⍀
VGS=4.5V, ID=7.2A
VGS=2.5V, ID=4.6A
Forward Transconductance (1)(3) gfs 13 S VDS=10V,ID=7.2A
DYNAMIC (3)
Input Capacitance Ciss 837 pF
VDS=10 V, VGS=0V,
f=1MHz Output Capacitance Coss 168 pF
Reverse Transfer Capacitance Crss 90 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 4.7 ns
VDD =10V, ID=1A
RG=6.0Ω, VGS=4.5V
Rise Time tr 5.7 ns
Turn-Off Delay Time td(off) 18.5 ns
Fall Time tf 10.5 ns
Total Gate Charge Qg 8.2 nC
VDS=10V,VGS=4.5V,
I
D
=7.2A Gate-Source Charge Qgs 2.3 nC
Gate-Drain Charge Qgd 2.0 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=4.1A,
VGS=0V
Reverse Recovery Time (3) trr 12 ns TJ=25°C, IF=1.9A,
di/dt= 100A/ µs
Reverse Recovery Charge (3) Qrr 4.9 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width =300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.