Diodes ZXMN2A01F - Manual (Page 3)

ZXMN2A01F
Document number: DS33513 Rev. 3 - 2
3 of 7
www.diodes.com
March 2014
© Diodes Incorporated
ZXMN2A01F
ADVANCED INFORMATION
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
20   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage I
GSS
  100 nA V
GS
= ± 12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.7   V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance (Note 8) R
DS(ON)
  0.12  V
GS
= 4.5V, I
D
= 4A
  0.225  V
GS
= 2.5V, I
D
= 1.5A
Forward Transconductance g
FS
 6.1  S V
DS
= 10V, I
D
= 4A
Diode Forward Voltage (Note 8 & 10) V
SD
 0.85  0.95  V V
GS
= 0V, I
S
= 3.2A, T
J
= +25°C
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
 303 
pF
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
 59 
Reverse Transfer Capacitance C
rss
 30 
Total Gate Charge (Note 9) Q
g
 3.0 
nC
V
DS
= 10V, V
GS
= 10V,
I
D
= 4A
Gate-Source Charge (Note 9) Q
gs
 0.8 
Gate-Drain Charge (Note 9) Q
gd
 1.0 
Turn-On Delay Time (Note 9) t
D(on)
 2.49 
ns
V
DD
= 10V , I
D
=4A,
R
G
= 6Ω, V
GS
= 5V
Turn-On Rise Time (Note 9) t
r
 5.21 
Turn-Off Delay Time (Note 9) t
D(off)
 7.47 
Turn-Off Fall Time (Note 9) t
f
 4.62 
Reverse Recovery Time t
rr
 23  ns
T
J
= +25°C, I
F
= 4A, di/dt= 100A/ µ s
Reverse Recovery Charge Qrr  5.65  nC
Notes: 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≦ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. Guaranteed by design. Not subject to production testing.