Zxmn2a01f advanced information, Maximum ratings, Thermal characteristics – Diodes ZXMN2A01F User Manual
Page 2
ZXMN2A01F
Document number: DS33513 Rev. 3 - 2
2 of 7
March 2014
© Diodes Incorporated
ZXMN2A01F
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±
12
V
Continuous Drain Current, V
GS
= 10V
(Note 6)
(Note 6)
(Note 5)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
I
D
2.2
1.7
1.9
A
Pulsed Drain Current (Note 7)
I
DM
8 A
Maximum Body Diode Continuous Current (Note 6)
I
S
1.29 A
Maximum Body Diode Continuous Current (Note 7)
I
SM
8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation
Linear Derating Factor
(Note 5)
P
D
625 mW
5 mW/°C
Total Power Dissipation
Linear Derating Factor
(Note 6)
P
D
806 mW
6.4 mW/°C
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
200
°C/W
(Note 6)
155
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t
≦
5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.