Diodes ZXM62N02E6 - Manual (Page 4)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
20 V I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 µ A V
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
G S
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage V
G S(th)
0.7 V I
D
=250
µ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance (1) R
DS(on)
0.1
0.125 Ω
Ω
V
G S
=4.5V, I
D
=2.2A
V
G S
=2.7V, I
D
=1.1A
Forward Transconductance g
fs
3.2 S V
DS
=10V,I
D
=1.1A
DYNAMIC (3)
Input Capacitance C
iss
460 pF
V
DS
=15 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
150 pF
Reverse Transfer Capacitance C
rss
50 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
4.0 ns
V
DD
=10V, I
D
=2.2A
R
G
=6.0 Ω , R
D
=4.4 Ω
(refer to test
circuit)
Rise Time t
r
10.4 ns
Turn-Off Delay Time t
d(off)
16.9 ns
Fall Time t
f
8.0 ns
Total Gate Charge Q
g
6.3 nC
V
DS
=16V,V
GS
=4.5V,
I
D
=2.2A (refer to
test circuit)
Gate-Source Charge Q
gs
1.5 nC
Gate Drain Charge Q
gd
2.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
j
=25°C, I
S
=2.2A,
V
G S
=0V
Reverse Recovery Time (3) t
rr
17.5 ns T
j
=25°C, I
F
=2.2A,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3) Q
rr
8.6 nC
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXM62N02E6
4
ISSUE 1 - JUNE 2004