Npn - electrical characteristics, Schottky - electrical characteristics, Zxtns618mc – Diodes ZXTNS618MC User Manual
Page 6: A product line of diodes incorporated
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
6 of 10
June 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTNS618MC
NPN - Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
40 100 -
V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 16)
BV
CEO
20 27 -
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.2 -
V
I
E
= 100µA
Collector Cutoff Current
I
CBO
- -
100
nA
V
CB
= 32V
Emitter Cutoff Current
I
EBO
- -
100
nA
V
EB
= 6V
Collector Emitter Cutoff Current
I
CES
- -
100
nA
V
CES
= 16V
Static Forward Current Transfer Ratio (Note 16)
h
FE
200 400 -
-
I
C
= 10mA, V
CE
= 2V
300 450 -
I
C
= 200mA, V
CE
= 2V
200 360 -
I
C
= 2A, V
CE
= 2V
100 180 -
I
C
= 6A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 16)
V
CE(sat)
- 8 15
mV
I
C
=0.1A, I
B
= 10mA
- 90
150
I
C
= 1A, I
B
= 10mA
- 115
135
I
C
= 2A, I
B
= 50mA
- 190
250
I
C
= 3A, I
B
= 100mA
- 210
300
I
C
= 4.5A, I
B
= 125mA
Base-Emitter Turn-On Voltage (Note 16)
V
BE(on)
- 0.88
-0.97 V
I
C
= 4.5A, V
CE
= 2V
Base-Emitter Saturation Voltage (Note 16)
V
BE(sat)
- 0.98
-1.07 V
I
C
= 4.5A, I
B
= 125mA
Output Capacitance
C
obo
- 23 30 pF
V
CB
= 10V, f = 1MHz
Transition Frequency
f
T
100 140 -
MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Turn-on Time
t
on
- 170 - ns
V
CC
=10V, I
C
=3A
I
B1
= I
B2
= 10mA
Turn-off Time
t
off
- 400 - ns
Schottky - Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Reverse Breakdown Voltage
BV
R
40 60 -
V
I
R
= -300µA
Forward Voltage (Note 16)
V
F
- 240
270
mV
I
F
= 50mA
- 265
290
I
F
= 100mA
- 305
340
I
F
= 250mA
- 355
400
I
F
= 500mA
- 390
450
I
F
= 750mA
- 425
500
I
F
= 1000mA
- 495
600
I
F
= 1500mA
- 420 -
I
F
= 1000mA, T
A
= 100
°C
Reverse Current
I
R
- 50
100 µA
V
R
= 30V
Diode Capacitance
C
D
- 25 -
pF
V
R
= 25V, f = 1MHz
Reverse Recovery Time
t
rr
- 12 - Ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
Notes: 16. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%.