Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN04120HFF User Manual
Page 4
ZXTN04120HFF
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
140
300
V
I
C
= 100
A
Collector-emitter breakdown
voltage (base open)
BV
CEO
120
140
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown
voltage
BV
EBO
10
16
V
I
E
= 100
A
Collector-base cut-off current I
CBO
<1
100
nA V
CB
= 120V
10
A V
CB
= 120V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CES
<0.1
10
A V
CE
= 120V
Emitter-base cut-off current
I
EBO
<1
100
nA
V
EB
= 8V
Collector-emitter saturation
voltage
V
CE(sat)
0.8
0.9
V
I
C
= 250mA, I
B
= 0.25mA
1.1
1.5
V
I
C
= 1A, I
B
= 1mA
1.1
1.5
V
I
C
= 2A, I
B
= 5mA
Base-emitter saturation
voltage
V
BE(sat)
1.55
1.70
V
I
C
= 1A, I
B
= 1mA
Base-emitter turn-on voltage V
BE(on)
1.45
1.70
V
I
C
= 1A, V
CE
= 5V
Static forward current
transfer ratio
h
FE
3K
11k
I
C
= 50mA, V
CE
= 5V
3K
12k
I
C
= 500mA, V
CE
= 5V
3K
10k
30K
I
C
= 1A, V
CE
= 5V
1K
5k
I
C
= 2A, V
CE
= 5V
Transition frequency
f
T
120
MHz
I
C
= 100mA, V
CE
= 10V
f
= 20MHz
Input capacitance
C
ibo
68
90
pF
V
EB
= 500mV, f
= 1MHz
Output capacitance
C
obo
12.8
25
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
507
ns
V
CC
= 10V
I
C
= 500mA,
I
B1
= I
B2
= 0.5mA
Rise time
t
r
136
ns
Storage time
t
s
910
ns
Fall time
t
f
369
ns