Diodes UMC5N - Manual (Page 2)

UMC5N
Document number: DS31205 Rev. 4 - 2
2 of 5
www.diodes.com
November 2011
© Diodes Incorporated
UMC5N
Maximum Ratings, Pre-Biased NPN Transistor, Q
1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage V
CC
50 V
Input Voltage V
IN
-10 to +40 V
Output Current I
O
30 mA
Collector Current I
C(MAX)
100 mA
Maximum Ratings, Pre-Biased PNP Transistor, Q
2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage V
CC
-50 V
Input Voltage V
IN
-20 to +7 V
Output Current I
O
-100 mA
Collector Current I
C(MAX)
-100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
150 mW
Thermal Resistance, Junction to Ambient Air (Note 4) R θJA 833 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
Electrical Characteristics, Pre-Biased NPN Transistor, Q
1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
(Note 5) V
I(OFF)
0.5 ⎯ ⎯ V V
CC
= 5V, I
O
= 100 μA
(Note 6) V I(ON)
⎯ ⎯ 3 V V O = 0.3V, I O = 2mA
Output Voltage V
O(ON)
⎯ 0.1 0.3 V I
O
/ I
I
= 10mA/0.5 mA
Input Current I
I
⎯ ⎯
0.18 mA V
I
= 5V
Output Current I
O(OFF)
⎯ ⎯ 0.5 μA V
CC
= 50V, V
I
= 0V
DC Current Gain G I
68 ⎯ ⎯ ⎯
V O = 5V, I O = 5mA
Gain-Bandwidth Product (Note 7) f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
Input Resistance R
1
32.9 47 61.1 k Ω ⎯
Resistance Ratio R 2 /R 1
0.8 1 1.2 ⎯ ⎯
Notes: 5. The device is guaranteed to be in “OFF” state with V
I(OFF)
up to 0.5V
6. The device is guaranteed to be in “ON” state with V
I(ON)
starting from 3V
7. Characteristic of Transistor – for reference only.
Electrical Characteristics, Pre-Biased PNP Transistor, Q
2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
V
I(OFF)
-0.3 ⎯ ⎯ V V
CC
= -5V, I
O
= -100
μA
V
I(ON)
⎯ ⎯ -2.5 V V
O
= -0.3V, I
O
= -20mA
Output Voltage V
O(ON)
⎯ -0.1 -0.3 V I
O
/ I
I
= -10mA/-0.5 mA
Input Current I
I
⎯ ⎯ -1.8 mA V
I
= -5V
Output Current I
O(OFF)
⎯ ⎯ -0.5 μA
V
CC
= -50V, V
I
= 0V
DC Current Gain G
I
30 ⎯ ⎯ ⎯ V
O
= -5V, I
O
= -10mA
Gain-Bandwidth Product (Note 7) f T
⎯ 250 ⎯ MHz V CE = -10V, I E = 5mA, f = 100MHz
Input Resistance R
1
3.29 4.7 6.11 k Ω ⎯
Resistance Ratio R
2
/R
1
1.7 2.1 2.6 ⎯ ⎯
Notes: 8. The device is guaranteed to be in “OFF” state with V
I(OFF)
up to -0.3V
9. The device is guaranteed to be in “ON” state with V
I(ON)
starting from -2.5V
10. Characteristic of Transistor – for reference only.