Diodes ZHB6718 - Manual (Page 4)

PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-20 -65 V I
C
=-100 µ A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20 -55 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 -8.8 V I
E
=-100 µ A
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-15V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-100 nA V
CES
=-15V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-16
-130
-190
-40
-200
-260
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-2.5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.98 -1.1 V I
C
=-2.5A, I
B
=-200mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.85 V I
+
=-2.5A, V
CE
=-2V*
Static Forward Current
Transfer
Ratio
h
FE
300
300
150
35
475
450
230
70
30
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition
Frequency
f
T
150 180 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
21 30 pF V
CB
=-10V, f=1MHz
Turn-On Time t
(on)
40 ns V
CC
=-10V, I
C
=-1A
I
B1
=I
B2
=-20mA
Turn-Off Time t
(off)
670 ns
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%.
ZHB6718