Diodes ZHB6718 - Manual (Page 3)

NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20 100 V I
C
=100 µ A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20 27 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 8.3 V I
E
=100 µ A
Collector Cut-Off Current I
CBO
100 nA V
CB
=16V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
100 nA V
CES
=16V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
130
15
150
200
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89 1.0 V I
C
=2.5A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.79 V I
C
=2.5A, V
CE
=2V*
Static Forward Current
Transfer
Ratio
h
FE
200
300
200
400
450
360
180
I
C
=10mA, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100 140 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
23 30 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
170 ns V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time t
(off)
400 ns
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%.
ZHB6718