Zxtn4004z, Maximum ratings, Thermal characteristics – Diodes ZXTN4004Z User Manual
Page 2: Thermal characteristics and derating information
ZXTN4004Z
Document Number: DS35457 Rev: 1 - 2
2 of 5
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN4004Z
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
150 V
Collector-Emitter Voltage
V
CEO
150 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
1 A
Peak Pulse Current (Note 4)
I
CM
3 A
Base Current
I
B
500 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 3)
R
θJA
83
°C/W
Thermal Resistance, Junction to Leads (Note 5)
R
θJL
16.2
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤ 2%.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information