Diodes ZXTN4004K - Manual (Page 2)

ZXTN4004K
Document Number: DS35458 Rev: 1 - 2
2 of 5
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN4004K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
150 V
Collector-Emitter Voltage V
CEO
150 V
Emitter-Base Voltage V EBO
7 V
Continuous Collector Current I
C
1 A
Peak Pulse Current (Note 4) I
CM
3 A
Base Current I B
500 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
3.8 W
Thermal Resistance, Junction to Ambient (Note 3) R θJA 33
°C/W
Thermal Resistance, Junction to Leads (Note 5) R θJL 12 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 3. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
Derating Curve
Temperature (°C)
M
a
x P
o
wer Di
s
s
ip
at
io
n (W)
100µ 1m 10m 100m 1 10 100 1k
0
5
10
15
20
25
30
35
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
herm
a
l Resist
ance (°
C/
W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Ma
x
im
u
m Po
w
e
r (
W
)