Ztx855, Electrical characteristics – Diodes ZTX855 User Manual
Page 4
ZTX855
Document Number DS33136 Rev. 4 - 2
4 of 7
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX855
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
250
375
−
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CER
250
375
−
V
I
C
= 1µA,R
B
≤1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
150
180
−
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
6
8
−
V
I
E
= 100µA
Collector-Base Cut-off Current
I
CBO
−
−
50
1
nA
µA
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
Collector-Emitter Cut-off Current
I
CER
R
≤ 1kΩ
−
−
50
1
nA
µA
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
Emitter-Base Cut-off Current
I
EBO
−
−
10
nA
V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
−
20
35
60
210
40
60
100
260
mV
I
C
= 100mA, I
B
= 5mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 4A, I
B
= 400mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
−
960
1100
mV
I
C
= 4A, I
B
= 400mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
−
880
1000
mV
I
C
= 4A, V
CE
= 5V
DC Current Gain (Note 9)
h
FE
100
100
35
200
200
55
10
−
300
−
−
I
C
= 10mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 4A, V
CE
= 5V
I
C
= 10A, V
CE
= 5V
Current Gain-Bandwidth Product (Note 9)
f
T
−
90
−
MHz
V
CE
= 10V, I
C
= 100mA
f = 50MHz
Output Capacitance (Note 9)
C
obo
−
22
−
pF
V
CB
= 20V, f = 1MHz
Switching Times
t
on
t
off
−
66
2130
−
ns
ns
I
C
= 1A, V
CC
= 50V
I
B1
= -I
B2
= 100mA
Notes:
9. Measured under pulsed conditions. Pulse width • 300µs. Duty cycle • 2%