Diodes ZTX758 - Manual (Page 4)

ZTX758
Document number: DS33299 Rev. 2 - 2
4 of 7
www.diodes.com
August 2013
© Diodes Incorporated
ZTX758
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-400 — — V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9) BV CEO
-400 — — V I C = -1mA
Emitter-Base Breakdown Voltage BV
EBO
-7 — — V I
E
= -100µA
Collector Cut-off Current I
CBO
— — -100 nA V
CB
= -320V
Emitter Cut-off Current I
EBO
— — -100 nA V
EB
= -6V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
— —
-300
-250
-500
mV
I
C
= -20mA, I
B
= -1mA
I
C
=-50mA, I
B
= -5mA
I C =-100mA, I B = -10mA
Base-Emitter Saturation Voltage (Note 9) V
BE(sat)
— — -0.9 V I
C
= -100mA, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 9) V
BE(on)
— — -0.9 V I
C
= -100mA, V
CE
= -5V
DC Current Gain (Note 9) h FE
50
50
40
— — —
I
C
= -1mA, V
CE
= -5V
I C = -100mA, V CE = -5V
I
C
= -200mA, V
CE
= -10V
Current Gain-Bandwidth Product (Note 9) f T
50 — — MHz
V CE = -20V, I C = -20mA
f = 20MHz
Output Capacitance (Note 9) C
obo
— — 20 pF V
CB
= -20V. f = 1MHz
Turn-On Times t
on
— 140 — ns I
C
= -100mA, I
B1
= 10mA,
I
B2
= -20mA, V
C
= -100V Turn-Off Times t off
— 2000 — ns
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%