Diodes ZXTN19100CFF - Manual (Page 4)

ZXTN19100CFF
Issue 1 - January 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
200 240 V I
C
= 100
␮A
Collector-emitter breakdown
voltage (forward blocking) BV
CEX
200 240 V I
C
= 100
␮A, R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open) BV
CEO
100 120 V I
C
= 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
7 8.3 V I
E
= 100
␮A
Emitter-collector breakdown
voltage (reverse blocking) BV
ECX
6 8.3 V I
E
= 100 ␮A, R
BC
< 1k ⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open) BV
ECO
5 8 V I
E
= 100 ␮A,
Collector-base cut-off current I
CBO
<1 50 nA V
CB
= 160V
20
␮A V
CB
= 160V, T
amb
= 100°C
Collector-emitter cut-off current I
CEX
<1 100 nA V
CE
= 160V, R
BE
< 1k ⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current I
EBO
<1 50 nA V
EB
= 5.6V
Collector-emitter saturation
voltage V
CE(sat)
45 60 mV I
C
= 1A, I
B
= 100mA (*)
105 135 mV I
C
= 1A, I
B
= 20mA (*)
170 235 mV I
C
= 4.5A, I
B
= 450mA (*)
Base-emitter saturation voltage V
BE(sat)
950 1050 mV I
C
= 4.5A, I
B
= 450mA (*)
Base-emitter turn-on voltage V
BE(on)
880 1000 mV I
C
= 4.5A, V
CE
= 2V (*)
Static forward current transfer
ratio h
FE
200 350 500 I
C
= 0.1A, V
CE
= 2V (*)
130 250 I
C
= 1A, V
CE
= 2V (*)
25 I
C
= 5A, V
CE
= 2V (*)
Transition frequency f
T
150 MHz I
C
= 100mA, V
CE
= 10V
f =50MHz
Input capacitance C
ibo
305 pF V
EB
= 0.5V, f = 1MHz (*)
Output capacitance C
obo
15.7 25 pF V
CB
= 10V, f = 1MHz (*)
Delay time t
d
28.3 ns V
CC
= 10V.
I
C
= 500mA,
I
B1
= I
B2
= 50mA.
Rise time t
r
23.6 ns
Storage time t
s
962 ns
Fall time t
f
133 ns