Diodes ZXTN19100CFF - Manual (Page 2)

ZXTN19100CFF
Issue 1 - January 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
200 V
Collector-emitter voltage (forward blocking) V
CEX
200 V
Collector-emitter voltage V
CEO
100 V
Emitter-collector voltage (reverse blocking) V
ECO
5 V
Emitter-base voltage V
EBO
7 V
Continuous collector current (c) I
C
4.5 A
Base current I
B
1 A
Peak pulse current I
CM
6 A
Power dissipation at T
amb
= 25°C (a) 0.84
Linear derating factor P
D
6.72 W
Power dissipation at T
amb
= 25°C (b) 1.34 mW/°C
Linear derating factor P
D
10.72 W
Power dissipation at T
amb
= 25°C (c) 1.5 mW/°C
Linear derating factor P
D
12.0 W
Power dissipation at T
amb
= 25°C (d) 2 mW/°C
Linear derating factor P
D
16.0 W
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R ⍜JA 149.3 °C/W
Junction to ambient (b) R
⍜JA
93.4 °C/W
Junction to ambient (c) R ⍜JA 83.3 °C/W
Junction to ambient (d) R ⍜JA 60 °C/W