Diodes ZXTC6720MC - Manual (Page 6)

ZXTC6720MC
Document number: DS31929 Rev. 3 - 2
6 of 9
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6720MC
PNP - Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V (BR)CBO
-70 -150 - V I
C = -100µA
Collector-Emitter Breakdown Voltage (Note 11) V
(BR)CEO
-70 -125 - V I
C
= -10mA
Emitter-Base Breakdown Voltage V
(BR)EBO
-7 -8.5 - V I
E
= -100µA
Collector Cutoff Current I CBO
- - -100 nA V CB = -55V
Emitter Cutoff Current I
EBO
- - -100 nA V
EB
= -6V
Collector Emitter Cutoff Current I
CES
- - -100 nA V
CE
= -55V
Static Forward Current Transfer Ratio
(Note 11)
h
FE
200
300
175
40
-
470
450
275
60
10
-
-
-
-
-
-
I
C
= -10mA, V
CE
= -5V
I C = -100mA, V CE = -5V
I
C
= -1A, V
CE
= -5V
I
C
= -1.5A, V
CE
= -5V
I
C
= -3A, V
CE
= -5V
Collector-Emitter Saturation Voltage
(Note 11)
V CE(sat)
-
-
-
- -35
-135
-140
-175
-50
-200
-220
-270
mV
I
C
= -0.1A, I
B
= -10mA
I
C
= -0.5A, I
B
= -20mA
I C = -1.0A, I B = -100mA
I C = -1.5A, I B = -200mA
Base-Emitter Turn-On Voltage (Note 11) V
BE(on)
- 0.78 1.00 V I
C
= -1.5A, V
CE
= -5V
Base-Emitter Saturation Voltage (Note 11) V
BE(sat)
- 0.94 1.05 V I
C
= -1.5A, I
B
= -200mA
Output Capacitance C obo
- 14 20 pF V CB = -10V. f = 1MHz
Transition Frequency f
T
150 180 - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-on Time t on
- 40 - ns V
CC
= -50V, I
C
= -1A
I
B1
= I
B2
= -50mA Turn-off Time t
off
- 700 - ns
Notes: 11. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%.