Zxtc6720mc, Thermal characteristics, Npn safe operating area – Diodes ZXTC6720MC User Manual
Page 3: Derating curve, Transient thermal impedance, Thermal resistance v board area, Power dissipation v board area, Pnp safe operating area
ZXTC6720MC
Document number: DS31929 Rev. 3 - 2
3 of 9
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6720MC
Thermal Characteristics
0.1
1
10
100
0.01
0.1
1
10
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
100µ
1m
10m 100m
1
10
100
1k
0
20
40
60
80
0.1
1
10
100
0
25
50
75
100
125
150
175
200
225
100m
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1
1
10
100
0.01
0.1
1
8sqcm 2oz Cu
One active die
100us
100ms
1s
V
CE(SAT)
Limited
1ms
NPN Safe Operating Area
Single Pulse, T
amb
=25°C
DC
10ms
I
C
Col
le
c
tor Current
(A
)
V
CE
Collector-Emitter Voltage (V)
10sqcm 1oz Cu
One active die
10sqcm 1oz Cu
Two active die
8sqcm 2oz Cu
One active die
Derating Curve
M
a
x
P
o
wer Di
s
s
ip
at
ion (
W
)
Temperature (°C)
8sqcm 2oz Cu
One active die
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Therm
a
l R
e
si
stance
(°
C
/W
)
Pulse Width (s)
1oz Cu
Two active die
1oz Cu
One active die
2oz Cu
Once active die
2oz Cu
Two active die
Thermal Resistance v Board Area
Therm
a
l R
e
si
stance
(°
C
/W
)
Board Cu Area (sqcm)
1oz Cu
One active die
1oz Cu
Two active die
2oz Cu
One active die
2oz Cu
Two active die
T
amb
=25°C
T
j max
=150°C
Continuous
Power Dissipation v Board Area
P
D
D
is
s
ipat
io
n (W)
Board Cu Area (sqcm)
8sqcm 2oz Cu
One active die
100us
1ms
10ms
100ms
1s
DC
Single Pulse, T
amb
=25°C
V
CE(SAT)
Limited
PNP Safe Operating Area
-I
C
Col
le
c
tor Current
(A
)
-V
CE
Collector-Emitter Voltage (V)