Diodes ZXTD4591E6 - Manual (Page 4)

ISSUE 1 - JULY 2000
ZXTD4591E6
NPN
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
80 V I
C
=100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
60 V I
C
=10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
5 V I
E
=100
␮A
Collector Cut-Off Current I
CBO
100 nA V
CB
=60V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector Emitter Cut-Off Current I
CES
100 nA V
CES
=60V
Collector-Emitter Saturation
Voltage V
CE(sat)
0.25
0.5 V
V I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter Saturation Voltage V
BE(sat)
1.1 V I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On Voltage V
BE(on)
1.0 V I
C
=1A, V
CE
=5V*
Static Forward Current Transfer
Ratio h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
10 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4