Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25060BZ User Manual
Page 5
ZXTN25060BZ
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
150
190
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
150
190
I
C
= 100
A, R
BE
Յ1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
60
80
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown voltage
BV
EBO
7
8
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8
V
I
E
= 100
A, R
BC
Յ1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
6
7
V
I
E
= 100
A,
Collector-base cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 120V
V
CB
= 120V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-
100
nA
V
CE
= 120V; R
BE
Յ1k⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
55
70
mV
I
C
= 1A, I
B
= 100mA
70
90
mV
I
C
= 1A, I
B
= 50mA
185
230
mV
I
C
= 4A, I
B
= 400mA
240
305
mV
I
C
= 5A, I
B
= 500mA
Base-emitter saturation voltage V
BE(sat)
1020
1100
mV
I
C
= 5A, I
B
= 500mA
Base-emitter turn-on voltage
V
BE(on)
960
1050
mV
I
C
= 5A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
100
200
300
I
C
= 10mA, V
CE
= 2V
90
180
I
C
= 1A, V
CE
= 2V
45
90
I
C
= 2A, V
CE
= 2V
20
I
C
= 5A, V
CE
= 2V
Transition frequency
f
T
185
MHz
I
C
= 100mA, V
CE
= 5V
f
= 100MHz
Output capacitance
C
OBO
11.5
20
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
16
ns
V
CC
= 10V. I
C
= 500mA,
I
B1
= I
B2
= 50mA.
Rise time
t
r
15
ns
Storage time
t
s
509
ns
Fall time
t
f
57
ns