Diodes ZXTN25060BFH - Manual (Page 4)

ZXTN25060BFH
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
150 190 V I
C
= 100 ␮A
Collector-emitter breakdown
voltage (forward blocking) BV
CEX
150 190 I
C
= 100 ␮A, R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open) BV
CEO
60 80 V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
Emitter-collector
breakdown voltage (reverse
blocking) BV
ECX
6 8 V I
E
= 100
␮A, R
BC
Յ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector
breakdown voltage (base
open) BV
ECO
6 7 V I
E
= 100 ␮A,
Emitter-base breakdown
voltage BV
EBO
7 8 V I
E
= 100
␮A
Collector cut-off current I
CBO
<1 50
20 nA
␮A
V
CB
= 120V
V
CB
= 120V, T
amb
= 100°C
Collector-emitter cut-off
current I
CEX
- 100 nA V
CE
= 120V; R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current I
EBO
<1 50 nA V
EB
= 5.6V
Collector-emitter saturation
voltage V
CE(sat)
33 40 mV
I
C
= 0,5A, I
B
= 50mA
(*)
73 95 mV
I
C
= 0,5A, I
B
= 10mA
(*)
50 65 mV
I
C
= 1A, I
B
= 100mA
(*)
150 175 mV
I
C
= 3.5A, I
B
= 350mA
(*)
Base-emitter saturation
voltage V
BE(sat)
960 1050 mV
I
C
= 3.5A, I
B
= 350mA
(*)
Base-emitter turn-on
voltage V
BE(on)
865 950 mV
I
C
= 3.5A, V
CE
= 2V
(*)
Static forward current
transfer ratio h
FE
100 200 300
I
C
= 10mA, V
CE
= 2V
(*)
90 180
I
C
= 1A, V
CE
= 2V
(*)
25 40
I
C
= 3.5A, V
CE
= 2V
(*)
Transition frequency f
T
185 MHz I
C
= 100mA, V
CE
= 5V
f = 100MHz
Output capacitance C
OBO
11.5 20 pF
V
CB
= 10V, f = 1MHz
(*)
Turn-on time t
(on)
34 ns V
CC
= 10V. I
C
= 500mA,
I
B1
= I
B2
= 50mA.
Turn-off time t
(off)
566 ns