Zxtn2011z, Electrical characteristics, A product line of diodes incorporated – Diodes ZXTN2011Z User Manual
Page 4
ZXTN2011Z
Da
tasheet Number: DS33663 Rev. 3 - 2
4 of 7
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2011Z
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ.
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
200 235 -
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Notes 9)
BV
CER
200 235 -
V
I
C
= 1µA,
R
B
≤
1kΩ
Collector-Emitter Breakdown Voltage (Notes 9)
BV
CEO
100 115 -
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1 - V
I
E
= 100µA
Collector Cutoff Current
I
CBO
-
-
<1
-
50
500
nA
nA
V
CB
= 150V
V
CB
= 150V, T
A
= +100°C
Collector Cutoff Current
I
CER
R
≤
1kΩ
-
-
<1
-
100
500
nA
nA
V
CB
= 150V
V
CB
= 150V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
- <1
10 nA
V
EB
= 6V
DC Current Transfer Static Ratio (Notes 9)
h
FE
100 230 -
-
I
C
= 10mA, V
CE
= 2V
100 200 300
I
C
= 2A, V
CE
= 2V
30 60 -
I
C
= 5A, V
CE
= 2V
10 20 -
I
C
= 10A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Notes 9)
V
CE(sat)
- 20
30
mV
I
C
= 100mA, I
B
= 5mA
-
45 60
I
C
= 1A, I
B
= 100mA
-
85 115
I
C
= 2A, I
B
= 100mA
-
155 195
I
C
= 5A, I
B
= 500mA
Base-Emitter Saturation Voltage (Notes 9)
V
BE(sat)
- 1000
1100 mV
I
C
= 5A, I
B
= 500mA
Base-Emitter Turn-on Voltage (Notes 9)
V
BE(on)
- 900
1000 mV
I
C
= 5A, V
CE
= 2V
Transitional Frequency
f
T
- 130 - MHz
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
Output Capacitance
C
obo
- 26 - pF
V
CB
= 10V, f = 1MHz,
Switching Time
t
on
-
41
- ns
V
CC
= 10V, I
C
= 1A,
I
B1
= I
B2
= 100mA
t
off
1010
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.