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Zxtn2011z, Electrical characteristics, A product line of diodes incorporated – Diodes ZXTN2011Z User Manual

Page 4

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ZXTN2011Z
Da

tasheet Number: DS33663 Rev. 3 - 2

4 of 7

www.diodes.com

December 2012

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXTN2011Z







Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ.

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BV

CBO

200 235 -

V

I

C

= 100µA

Collector-Emitter Breakdown Voltage (Notes 9)

BV

CER

200 235 -

V

I

C

= 1µA,

R

B

1kΩ

Collector-Emitter Breakdown Voltage (Notes 9)

BV

CEO

100 115 -

V

I

C

= 1mA

Emitter-Base Breakdown Voltage

BV

EBO

7 8.1 - V

I

E

= 100µA

Collector Cutoff Current

I

CBO

-

-

<1

-

50

500

nA
nA

V

CB

= 150V

V

CB

= 150V, T

A

= +100°C

Collector Cutoff Current

I

CER

R

1kΩ

-

-

<1

-

100
500

nA
nA

V

CB

= 150V

V

CB

= 150V, T

A

= +100°C

Emitter Cutoff Current

I

EBO

- <1

10 nA

V

EB

= 6V

DC Current Transfer Static Ratio (Notes 9)

h

FE

100 230 -

-

I

C

= 10mA, V

CE

= 2V

100 200 300

I

C

= 2A, V

CE

= 2V

30 60 -

I

C

= 5A, V

CE

= 2V

10 20 -

I

C

= 10A, V

CE

= 2V

Collector-Emitter Saturation Voltage (Notes 9)

V

CE(sat)

- 20

30

mV

I

C

= 100mA, I

B

= 5mA

-

45 60

I

C

= 1A, I

B

= 100mA

-

85 115

I

C

= 2A, I

B

= 100mA

-

155 195

I

C

= 5A, I

B

= 500mA

Base-Emitter Saturation Voltage (Notes 9)

V

BE(sat)

- 1000

1100 mV

I

C

= 5A, I

B

= 500mA

Base-Emitter Turn-on Voltage (Notes 9)

V

BE(on)

- 900

1000 mV

I

C

= 5A, V

CE

= 2V

Transitional Frequency

f

T

- 130 - MHz

I

C

= 100mA, V

CE

= 10V,

f = 50MHz

Output Capacitance

C

obo

- 26 - pF

V

CB

= 10V, f = 1MHz,

Switching Time

t

on

-

41

- ns

V

CC

= 10V, I

C

= 1A,

I

B1

= I

B2

= 100mA

t

off

1010

Notes:

8. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.