Diodes ZXTN2011Z - Manual (Page 2)

ZXTN2011Z
Da
tasheet Number: DS33663 Rev. 3 - 2
2 of 7
www.diodes.com
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN2011Z
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
200 V
Collector-Emitter Voltage V
CEO
100 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
4.5 A
Peak Pulse Current I
CM
10 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear derating factor
P
D
1.5
12
W
mW/°C
Power Dissipation (Note 6)
Linear derating factor
P
D
2.1
16.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
83 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
60 °C/W
Thermal Resistance, Junction to Ambient (Note 7) R
θJL
3.23 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.