Diodes ZXTN2010Z - Manual (Page 4)

ZXTN2010Z
Da
tasheet Number: DS33661 Rev. 4 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
ZXTN2010Z
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
150 190 — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10) BV
CER
150 190 — V I
C
= 1µA, R
B
≤ 1k Ω
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
60 80 — V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.1 — V I
E
= 100µA
Collector Cutoff Current I
CBO
— < 1
50
500
nA
nA V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
Collector Cutoff Current
I
CER
R ≤ 1k Ω
— < 1
100
500 nA
nA V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
Emitter Cutoff Current I
EBO
— < 1 10 nA V
EB
= 6V
DC Current Transfer Static Ratio (Note 10) h
FE
100 200 —
—
I C = 10mA, V CE = 1V
100 200 300 I
C
= 2A, V
CE
= 1V
55 105 — I
C
= 5A, V
CE
= 1V
20 40 — I
C
= 10A, V
CE
= 1V
Collector-Emitter Saturation Voltage (Note 10) V
CE(SAT)
— 17 30
mV
I
C
= 100mA, I
B
= 5mA
— 35 55 I
C
= 1A, I
B
= 100mA
— 40 65 I
C
= 1A, I
B
= 50mA
— 90 125 I C = 2A, I B = 50mA
— 170 230 I
C
= 6A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 10) V
BE(SAT)
— 970 1100 mV I
C
= 6A, I
B
= 300mA
Base-Emitter Turn-on Voltage (Note 10) V BE(ON)
— 910 1050 mV I C = 6A, V CE = 1V
Transitional Frequency f
T
— 130 — MHz
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
Output Capacitance C obo
— 31 — pF V CB
= 10V, f = 1MHz,
Switching Time
t
ON
—
42
— ns
V
CC
= 10V, I
C
= 1A,
I B1 = I B2 = 100mA t
OFF
760
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.