Diodes ZXTP2012A - Manual (Page 2)

ZXTP2012A
S E M I C O N D U C T O R S
ISSUE 2 - NOVEMBER 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R ⍜JA 125 °C/W
Junction to ambient (b) R ⍜JA 175 °C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b) For a device mounted in a socket in still air conditions. Collector lead length 10mm.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
-100 V
Collector-emitter voltage BV
CEO
-60 V
Emitter-base voltage BV
EBO
-7 V
Continuous collector current
(a)
I
C
-3.5 A
Peak pulse current I
CM
-15 A
Practical power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.0
8
W
mW/°C
Power dissipation at T
A
=25°C (b)
Linear derating factor
P
D
0.71
5.7
W
mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to 150 °C
ABSOLUTE MAXIMUM RATINGS