Diodes ZTX751 - Manual (Page 4)

ZTX751
Document number: DS36459 Rev. 3 - 2
4 of 7
www.diodes.com
July 2013
© Diodes Incorporated
ZTX751
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-80 — — V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10) BV CEO
-60 — — V I C = -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 — — V I
E
= -100µA
Collector Cut-off Current I
CBO
— —
-0.1
-10
µA
µA V
CB
= -60V
V
CB
= -60V,T
amb
= +100°C
Emitter Cut-off Current I
EBO
— — -0.1 µA V
EB
= -6V
Collector-Emitter Saturation Voltage (Note 10) V
CE(sat)
—
-150
-280 -300
-500
mV
I
C
= -1A, I
B
= -100mA
I C =-2A, I B = -200mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
— -0.9 -1.25 V I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 10) V
BE(on)
— -0.8 -1 V I
C
= -1A, V
CE
= -2V
DC Current Gain (Note 10) h
FE
70
100
80
40
200
200
170
80
—
300
—
—
—
I
C
= -50mA, V
CE
= -2V
I C = -500mA, V CE = -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
Current Gain-Bandwidth Product (Note 10) f
T
100 140 — MHz
V
CE
= -5V, I
C
= -100mA
f = 100MHz
Output Capacitance (Note 10) C obo
— — 30 pF V CB = -10V. f = 1MHz
Turn-On Times t
on
— 40 — ns I
C
= -500mA, I
B1
= I
B2
= -50mA,
V
CC
= -10V Turn-Off Times t off
— 450 — ns
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤2%