Electrical characteristics, Ztx651, A product line of diodes incorporated – Diodes ZTX651 User Manual
Page 4
ZTX651
Document number: DS33283 Rev. 3 - 2
4 of 7
May 2013
© Diodes Incorporated
ZTX651
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
80
—
—
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
60
—
—
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7
—
—
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
—
—
0.1
10
µA
µA
V
CB
= 60V
V
CB
= 60V,T
amb
= 100°C
Emitter Cut-off Current
I
EBO
—
—
0.1
µA
V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
120
230
300
500
mV
I
C
= 1A, I
B
= 100mA
I
C
=2A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
—
0.9
1.25
V
I
C
=1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
—
0.8
1
V
I
C
= 1A, V
CE
= 2V
DC Current Gain (Note 10)
h
FE
70
100
80
40
200
200
170
80
—
300
—
—
—
I
C
= 50mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
Current Gain-Bandwidth Product (Note 10)
f
T
140
175
—
MHz
V
CE
= 5V, I
C
= 100mA
f = 100MHz
Output Capacitance (Note 10)
C
obo
—
—
30
pF
V
CB
= 10V. f = 1MHz
Turn-On Times
t
on
—
45
—
ns
I
C
= 500mA, I
B1
= I
B2
= 50mA,
V
CC
= 10V
Turn-Off Times
t
off
—
800
—
ns
Notes:
10. Measured under pulsed conditions. Pulse width
≤ 300 µs. Duty cycle ≤2%