Diodes ZXTP2009Z - Manual (Page 4)

ZXTP2009Z
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-50 -90 V I
C
=-100 ␮A
Collector-emitter breakdown voltage BV
CES
-50 -90 V I
C
=-100 ␮A
Collector-emitter breakdown voltage BV
CEO
-40 -58 V I
C
=-10mA*
Emitter-base breakdown voltage BV
EBO
-7.5 -8.3 V I
E
=-100 ␮A
Collector cut-off current I
CBO
Ͻ1 -20 nA V
CB
=-40V
Collector cut-off current I
CES
Ͻ1 -20 nA V
CB
=-32V
Emitter cut-off current I
EBO
Ͻ1 -20 nA V
EB
=-6V
Collector-emitter saturation voltage V
CE(SAT)
-15
-44
-50
-120
-70
-125
-130
-162
-30
-60
-70
-165
-80
-175
-175
-185
mV
mV
mV
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-2A, I
B
=-40mA*
I
C
=-3.5A, I
B
=-175mA*
I
C
=-5.5A, I
B
=-550mA*
Base-emitter saturation voltage V
BE(SAT)
-820
-1000
-900
-1075
mV
mV
I
C
=-2A, I
B
=-40mA*
I
C
=-5.5A, I
B
=-550mA*
Base-emitter turn-on voltage V
BE(ON)
-778
-869
-850
-950
mV
mV
I
C
=-2A, V
CE
=-2V*
I
C
=-5.5A, V
CE
=-2V*
Static forward current transfer ratio H
FE
200
200
170
110
390
350
290
175
550
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5.5A, V
CE
=-2V*
Transition frequency f
T
152 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output capacitance C
OBO
53 pF V
CB
=-10V, f=1MHz*
Switching times t
d
t
r
t
s
t
r
18
17
325
60
ns I
C
=-1A, V
CC
=-10V,
I
B1
=I
B2
=-100mA
Switching times t
d
t
r
t
s
t
r
55
107
264
103
ns I
C
=-2A, V
CC
=-30V,
I
B1
=I
B2
=-20mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.