Diodes ZXTN619MA - Manual (Page 4)

ZXTN619MA
Document Number DS31892 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN619MA
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
100 190 - V I
C
= 100 µA
Collector-Emitter Breakdown Voltage (Note 6) BV
CEO
50 65 - V I
C
= 10 mA
Emitter-Base Breakdown Voltage BV EBO
7 8.2 - V I E = 100 µA
Collector Cutoff Current I
CBO
- - 100 nA V
CB
= 80V
Emitter Cutoff Current I
EBO
- - 100 nA V
EB
= 6V
Collector Emitter Cutoff Current I
CES
- - 100 nA V
CES
= 40V
Static Forward Current Transfer Ratio (Note 6) h
FE
200
300
200
100
-
400
450
400
225
40
-
-
-
-
-
-
I
C
= 10mA, V
CE
= 2V
I
C
= 200mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 6) V
CE(sat)
-
-
-
-
-
- 10
70
145
115
225
270
20
100
200
220
300
320
mV
I C = 0.1A, I B = 10mA
I
C
= 1A, I
B
= 5mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 50mA
I
C
= 3A, I
B
= 100mA
I
C
= 4A, I
B
= 200mA
Base-Emitter Turn-On Voltage (Note 6) V BE(on)
- 0.94 1.00 V I C = 4A, V CE = 2V
Base-Emitter Saturation Voltage (Note 6) V
BE(sat)
- 1.00 1.07 V I
C
= 4A, I
B
= 200mA
Output Capacitance C
obo
- 12 20 pF V
CB
= 10V. f = 1MHz
Transition Frequency f T
100 165 - MHz
V CE = 10V, I C = 50mA,
f = 100MHz
Turn-On Time t
on
- 170 - ns V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 10mA Turn-Off Time t
off
- 750 - ns
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.