Electrical characteristics, Zxtn2040f, A product line of diodes incorporated – Diodes ZXTN2040F User Manual
Page 3
ZXTN2040F
Document number: DS33668 Rev. 3 - 2
3 of 6
August 2012
© Diodes Incorporated
ZXTN2040F
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
40 —
— V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
(base open) (Note 8)
BV
CEO
40 —
— V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
6 —
— V
I
E
= 100µA
Collector-emitter cut-off current
I
CES
—
—
100 nA
V
CE
= 30V
Collector-base Cut-off Current
I
CBO
—
—
100
nA
V
CB
= 30V
Emitter-base Cut-off Current
I
EBO
—
—
100 nA
V
EB
= 5V
ON CHARACTERISTICS (Note 8)
Static Forward Current Transfer Ratio
h
FE
300
300
200
35
—
—
900
—
—
—
I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
Collector-Emitter Saturation Voltage
V
CE(sat)
—
—
200
300
500
mV
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage
V
BE(sat)
—
—
1.1 V
I
C
= 1A, I
B
= 100mA
Base-Emitter On Voltage
V
BE(on)
—
—
1.0 V
I
C
= 1A, V
CE
= 5V
SMALL SIGNAL CHARACTERISTICS (Note 8)
Transition Frequency
f
T
150 —
— MHz
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
Output Capacitance
C
obo
— —
10 pF
V
CB
= 10V, f = 1MHz
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%