Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25040DFL User Manual
Page 4
ZXTN25040DFL
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
130
170
V
I
C
= 100
A
Collector-emitter
breakdown voltage (forward
blocking)
BV
CEX
130
170
V
I
C
= 100
A; R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
40
63
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
7.4
V
I
E
= 100
A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
6
7.4
V
I
E
= 100
A,
Collector cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 100V
V
CB
= 100V, T
amb
= 100°C
Collector emitter cut-off
current
I
CEX
<1
100
nA
V
CE
= 100V; R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
35
50
mV
I
C
= 0.5A, I
B
= 50mA
60
80
mV
I
C
= 0.5A, I
B
= 10mA
70
85
mV
I
C
= 1A, I
B
= 100mA
145
185
mV
I
C
= 1.5A, I
B
= 30mA
235
285
mV
I
C
= 4A, I
B
= 400mA
Base-emitter saturation
voltage
V
BE(sat)
840
950
mV
I
C
= 1.5A, I
B
= 30mA
Base-emitter turn-on
voltage
V
BE(on)
770
850
mV
I
C
= 1.5A, V
CE
= 2V
Static forward current
transfer ratio
h
FE
300
450
900
I
C
= 10mA, V
CE
= 2V
300
400
I
C
= 1A, V
CE
= 2V
170
250
I
C
= 1.5A, V
CE
= 2V
25
40
I
C
= 4A, V
CE
= 2V
Transition frequency
f
T
190
MHz
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
obo
11.7
20
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
(d)
64
ns
V
CC
= 10V,
I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time
t
(r)
108
ns
Storage time
t
(s)
428
ns
Fall time
t
(f)
130
ns