Diodes ZXTN25040DFH - Manual (Page 2)

ZXTN25040DFH
Document number: DS33697 Rev. 2 - 2
2 of 7
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
130 V
Collector-Emitter Voltage (Forward Blocking) V
CEX
130 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Collector Voltage (Reverse Blocking) V ECO
6 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current (Note 6) I
C
4 A
Peak Pulse Current I CM
10 A
Base Current I
B
1 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 4)
P
D
-
0.73
5.84
W
mW/ °C
(Note 5)
1.05
8.4
(Note 6)
1.25
9.6
(Note 7)
1.81
14.5
Thermal Resistance, Junction to Ambient
(Note 4)
R θJA
171
°C/W
(Note 5) 119
(Note 6) 100
(Note 7) 69
Thermal Resistance, Junction to Lead (Note 8) R θJL 74.95 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. As note 6 above, measured at t < 5 seconds
8. Thermal resistance from junction to solder-point (at the end of the collector lead).