Electrical characteristics, A product line of diodes incorporated – Diodes ZXTN07045EFF User Manual
Page 4
ZXTN07045EFF
Document number: DS33674 Rev. 4 - 2
4 of 7
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN07045EFF
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
45 160 -
V I
C
= 100µA
Collector-Emitter Breakdown Voltage
(base open) (Note 9)
BV
CEO
45 60 -
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.3 -
V
I
E
= 100µA
Emitter-collector breakdown voltage
(reverse blocking)
BV
ECX
6 8.2 -
V
I
E
= 100µA; R
BC
< 1k
Ω or
-0.25V < V
BC
< 0.25V
Emitter-collector breakdown voltage
(base open)
BV
ECO
6 7.2 -
V
I
E
= 100µA
Collector-base Cut-off Current
I
CBO
-
<1
-
50
20
nA
µA
V
CB
= 35V
V
CB
= 35V, T
A
= 100°C
Emitter-base Cut-off Current
I
EBO
- <1 50 nA
V
EB
= 5.6V
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio
h
FE
500
400
250
70
800
710
530
125
1500
-
-
-
-
I
C
= 100mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 4A, V
CE
= 2V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
45
160
60
200
230
70
230
80
270
280
mV
I
C
= 0.1A, I
B
= 0.5mA
I
C
= 1A, I
B
= 5mA
I
C
= 1A, I
B
= 100mA
I
C
= 2A, I
B
= 20mA
I
C
= 4A, I
B
= 80mA
Base-Emitter Saturation Voltage
V
BE(sat)
- 1000
1100 mV
I
C
= 4A, I
B
= 80mA
Base-Emitter On Voltage
V
BE(on)
- 875
1000 mV
I
C
= 4A, V
CE
= 2V
SMALL SIGNAL CHARACTERISTICS (Note 9)
Transition Frequency
f
T
150 190 -
MHz
I
C
= 50mA, V
CE
= 5V,
f = 50MHz
Input Capacitance
C
ibo
- 225 - pF
V
EB
= 0.5V, f = 1MHz
Output Capacitance
C
obo
- 18.4 25 pF
V
CB
= 10V, f = 1MHz
Delay time
t
d
- 22.3 - ns
V
CC
= 10V,
I
C
= 500mA,
I
B1
= I
B2
= 50mA
Rise time
t
r
- 10.6 - ns
Storage time
t
s
- 613 - ns
Fall time
t
f
- 146 - ns
Notes:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%