Diodes ZXTN07045EFF - Manual (Page 2)

ZXTN07045EFF
Document number: DS33674 Rev. 4 - 2
2 of 7
www.diodes.com
February 2012
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A Product Line of
Diodes Incorporated
ZXTN07045EFF
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
45 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Collector Voltage (Reverse Blocking) V
ECO
6 V
Emitter-Base Voltage V EBO
7 V
Continuous Collector Current (Note 6) I
C
4 A
Peak Pulse Current I
CM
6 A
Base Current I B
1 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 4)
P
D
-
0.84
6.72
W
mW/ °C
(Note 5)
1.34
10.72
(Note 6)
1.50
12.0
(Note 7)
2.0
16.0
Thermal Resistance, Junction to Ambient
(Note 4)
R θJA
149
°C/W
(Note 5) 93
(Note 6) 83
(Note 7) 60
Thermal Resistance, Junction to Lead (Note 8) R θJL 43.77 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. As note 6 above, measured at t < 5 seconds
8. Thermal resistance from junction to solder-point (at the end of the collector lead).