Diodes ZXTC6719MC - Manual (Page 6)

ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
6 of 9
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6719MC
PNP - Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V (BR)CBO
-50 -80 - V I
C = -100µA
Collector-Emitter Breakdown Voltage (Note 11) V
(BR)CEO
-40 -70 - V I
C
= -10mA
Emitter-Base Breakdown Voltage V
(BR)EBO
-7 -8.5 - V I
E
= -100µA
Collector Cutoff Current I CBO
- - -100 nA V CB = -40V
Emitter Cutoff Current I
EBO
- - -100 nA V
EB
= -6V
Collector Emitter Cutoff Current I
CES
- - -100 nA V
CES
= -32V
Static Forward Current Transfer Ratio
(Note 11)
h
FE
300
300
180
60
12
480
450
290
130
22
-
-
-
-
-
-
I
C
= -10mA, V
CE
= -2V
I C = -100mA, V CE = -2V
I
C
= -1A, V
CE
= -2V
I
C
= -1.5A, V
CE
= -2V
I
C
= -3A, V
CE
= -2V
Collector-Emitter Saturation Voltage
(Note 11)
V CE(sat)
-
-
-
-
- -25
-150
-195
-210
-260
-40
-220
-300
-300
-370
mV
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -50mA
I C = -1.5A, I B = -100mA
I C = -2A, I B = -200mA
I
C
= -2.5A, I
B
= -250mA
Base-Emitter Turn-On Voltage (Note 11) V
BE(on)
- -0.89 -0.95 V I
C
= -2.5A, V
CE
= -2V
Base-Emitter Saturation Voltage (Note 11) V
BE(sat)
- -0.97 -1.05 V I
C
= -2.5A, I
B
= -250mA
Output Capacitance C
obo
- 19 25 pF V
CB
= -10V. f = 1MHz
Transition Frequency f
T
150 190 - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-on Time t on
- 40 - ns
V
CC
= -15V, I
C
= -0.75A
I
B1
= I
B2
= -10mA Turn-off Time t off
- 435 - ns
Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.