Diodes ZXTC2045E6 - Manual (Page 2)

ZXTC2045E6
Document Number: DS33645 Rev: 2 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
ZXTC2045E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Maximum Ratings – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEV
40 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I C
1.5 A
Peak Pulsed Collector Current I
CM
5 A
Base Current I
B
1 A
Maximum Ratings – Q2 (PNP Transistor)
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEV
-40 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C
-1.5 A
Peak Pulsed Collector Current I CM
-5 A
Base Current I
B
-1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
P
D
0.7
5.6
W
mW/ °C
(Notes 7 & 10)
0.9
7.2
(Notes 7 & 11)
1.1
8.8
(Notes 8 & 10)
1.1
8.8
(Notes 9 & 10)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 6 & 10)
R θJA
179
°C/W
(Notes 7 & 10) 139
(Notes 7 & 11) 113
(Notes 8 & 10) 113
(Notes 9 & 10) 73
Thermal Resistance, Junction to Lead (Note 12) R θJL 95.50
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as note (8), except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active dice running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).