Zxt790ak, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXT790AK User Manual
Page 4

ZXT790AK
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
-50
-70
V
I
C
= -100
A
Collector-Emitter Breakdown Voltage
BV
CEO
-40
-60
V
I
C
= -10mA
(1)
Emitter-Base Breakdown Voltage
BV
EBO
-5
-8.3
V
I
E
= -100
A
Collector Cut-Off Current
I
CBO
<1
-20
nA
V
CB
= -30V
Collector Cut-Off Current
I
CE
S
<1
-20
nA
V
CB
= -30V
Emitter Cut-Off Current
I
EBO
<1
-20
nA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-110
-220
-260
-250
-170
-350
-450
-450
mV
mV
mV
mV
I
C
= -0.5A, I
B
= -5mA
(1)
I
C
= -1A, I
B
= -10mA
(1)
I
C
= -2A, I
B
= -50mA
(1)
I
C
= -3A, I
B
= -300mA
(1)
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.05
-1.15
V
I
C
= -3A, IB = -300mA
(1)
Base-Emitter Turn-On Voltage
V
BE(ON)
-0.9
-1.0
V
I
C
= -3A, VCE = -2V
(1)
Static Forward Current Transfer Ratio
h
FE
300
250
200
150
80
450
390
350
280
170
800
I
C
= -10mA, V
CE
= -2V
(1)
I
C
= -500mA, V
CE
= -2V
(1)
I
C
= -1A, V
CE
= -2V
(1)
I
C
= -2A, V
CE
= -2V
(1)
I
C
= -3A, V
CE
= -2V
(1)
Transition Frequency
f
T
100
MHz I
C
= -50mA, V
CE
= -5V
f = 50MHz
Output Capacitance
C
OBO
24
pF
V
CB
= -10V, f = 1MHz
(1)
Switching Times
t
ON
t
OFF
35
600
ns
ns
I
C
= -500mA, V
CC
= -10V,
I
B1
= I
B2
= -50mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1)
Measured under pulsed conditions. Pulse width
Յ 300s; duty cycle Յ 2%.