Electrical characteristics – Diodes ZXT13P40DE6 User Manual
Page 4
ZXT13P40DE6
Document Number: DS33639 Rev: 4 - 2
4 of 7
May 2014
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXT13P40DE6
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-50 -80
⎯
V
I
C
= -100
μA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-40 -70
⎯
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7.5 -8.5
⎯
V
I
E
= -100
μA
Collector-Base Cutoff Current
I
CBO
⎯
⎯
-100 nA
V
CB
= -40V
Emitter Cutoff Current
I
EBO
⎯
⎯
-100 nA
V
EB
= -6V
Collector-Emitter Cutoff Current
I
CES
⎯
⎯
-100 nA
V
CES
= -40V
ON CHARACTERISTICS (Note 10)
DC Current Gain
h
FE
300 500
⎯
⎯
I
C
= -10mA, V
CE
= -2V
300 450 900
⎯
I
C
= -1A, V
CE
= -2V
100 250
⎯
⎯
I
C
= -3A, V
CE
= -2V
15 50
⎯
⎯
I
C
= -5A, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
-16 -25
mV
I
C
= -100mA, I
B
= -10mA
⎯
-110 -200
I
C
= -1A, I
B
= -20mA
⎯
-145 -190
I
C
= -2A, I
B
= -100mA
⎯
-175 -240
I
C
= -3A, I
B
= -300mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
⎯
-1.1 V
I
C
= -3A, I
B
= -300mA
Base-Emitter Turn-On Voltage
V
BE(on)
⎯
⎯
-0.9 V
I
C
= -3A, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
⎯
115
⎯
MHz
V
CE
= -10V, I
C
= -50mA, f = 50MHz
Output Capacitance
C
obo
⎯
42
⎯
pF
V
CB
= -10V, f = 1MHz
Turn-On Time
t
(on)
⎯
185
⎯
ns
V
CC
= -10V, I
C
= -1A
I
B1
= I
B2
= -20mA
Turn-Off Time
t
(off)
⎯
400
⎯
ns
Note:
10. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.