Diodes ZXT13N50DE6 - Manual (Page 2)

ZXT13N50DE6
Document Number: DS33636 Rev: 3 - 2
2 of 7
www.diodes.com
April 2014
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXT13N50DE6
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
7.5 V
Base Current I
B
500 mA
Continuous Collector Current I
C
4 A
Peak Pulse Collector Current I
CM
10 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
1.1
8.8
W
mW/ C
(Note 7)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
113
C/W (Note 7) 73
Thermal Resistance, Junction to Lead (Note 8) R
θJL
18.6
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as note (6), except the device is measured at t
 5 sec.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.