Diodes ZXT12P40DX - Manual (Page 4)

ISSUE
2 - DECEMBER 2006
ZXT12P40DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
-50 -95 V I
C
=-100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
-40 -80 V I
C
=-10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
-7.5 -8.5 V I
E
=-100 ␮A
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-40V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-6V
Collector Emitter Cut-Off Current I
CES
-100 nA V
CES
=-40V
Collector-Emitter Saturation
Voltage V
CE(sat)
-18
-155
-190
-150
-22
-215
-260
-190
mV
mV
mV
mV I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-2A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter Saturation Voltage V
BE(sat)
-0.92 -1.0 V I
C
=-2A, I
B
=-100mA*
Base-Emitter Turn-On Voltage V
BE(on)
-0.80 -0.85 V I
C
=-2A, V
CE
=-2V*
Static Forward Current Transfer
Ratio h
FE
300
300
150
10
450
450
300
25
900
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Transition Frequency f
T
130 MHz I
C
=-
30mA, V
CE
=-10V
f=-50MHz
Output Capacitance C
obo
35 pF V
CB
=-10V, f=1MHz
Turn-On Time t
(on)
97 ns V
CC
=-10V, I
C
=-1A
I
B1
=I
B2
=-20mA
Turn-Off Time t
(off)
640 ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4