Diodes ZXT10N50DE6 - Manual (Page 4)

ISSUE 1 - SEPTEMBER 2000
ZXT10N50DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
50 190 V I
C
=100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
50 65 V I
C
=10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
5 8.3 V I
E
=100 ␮A
Collector Cut-Off Current I
CBO
100 nA V
CB
=40V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector Emitter Cut-Off Current I
CES
100 nA V
CES
=40V
Collector-Emitter Saturation
Voltage V
CE(sat)
14
145
115
225
20
200
200
300
mV
mV
mV
mV I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
Base-Emitter Saturation Voltage V
BE(sat)
0.93 1.0 V I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On Voltage V
BE(on)
0.88 0.95 V I
C
=3A, V
CE
=2V*
Static Forward Current Transfer
Ratio h
FE
200
300
200
100 400
450
400
225
40
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency f
T
100 165 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
12 20 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
170 ns V
CC
=10V, I
C
=1A
I
B1
=I
B2
=10mA
Turn-Off Time t
(off)
750 ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4