Electrical characteristics, Zxtp749f, A product line of diodes incorporated – Diodes ZXTP749F User Manual
Page 4
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
4 of 7
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP749F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-35 -60 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 7)
BV
CEO
-25 -40 -
V I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.4 -
V I
E
= -100µA
Collector Cutoff Current
I
CBO
- <1 -50
-0.5
nA
µA
V
CB
= -28V
V
CB
= -28V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
- <1 -50 nA
V
EB
= -5.6V
Static Forward Current Transfer Ratio (Note 7)
h
FE
200
130
100
25
320
230
180
50
500
-
-
-
-
I
C
= -100mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
-
-
-85
-229
-150
-350
mV
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
Base-Emitter Turn-On Voltage (Note 7)
V
BE(on)
- -786
-850 mV
I
C
= -1A, V
CE
= -2V
Base-Emitter Saturation Voltage (Note 7)
V
BE(sat)
- -895
-1000 mV
I
C
= -1A, I
B
= -100mA
Notes: 7.
Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%