Zxtp749f, Maximum ratings, Thermal characteristics – Diodes ZXTP749F User Manual
Page 2
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
2 of 7
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP749F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-35 V
Collector-Emitter Voltage
V
CEO
-25 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-3 A
Peak Pulse Current
I
CM
-6 A
Base Current
I
B
-500 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
725 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
172
°C/W
Thermal Resistance, Junction to Leads (Note 6)
R
θJL
79
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
5. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).