Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25020DFL User Manual
Page 4
ZXTN25020DFL
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
100
125
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
100
120
V
I
C
= 100 A; R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
20
35
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8
V
I
E
= 100
A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
5
6
V
I
E
= 100
A,
Emitter-base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
A
Collector cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 80V
V
CB
= 80V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-
100
nA
V
CE
= 80V; R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(SAT)
60
70
mV
I
C
= 1A, I
B
= 100mA
(*)
85
100
mV
I
C
= 1A, I
B
= 20mA
(*)
140
160
mV
I
C
= 2A, I
B
= 40mA
(*)
180
225
mV
I
C
= 2A, I
B
= 20mA
(*)
245
270
mV
I
C
= 4,5A, I
B
= 450mA
(*)
Base-emitter saturation
voltage
V
BE(SAT)
895
1000
mV
I
C
= 2A, I
B
= 40mA
(*)
Base-emitter turn-on voltage V
BE(ON)
825
900
mV
I
C
= 2A, V
CE
= 2V
(*)
Static forward current
transfer ratio
h
FE
300
450
900
I
C
= 10mA, V
CE
= 2V
(*)
220
350
I
C
= 2A, V
CE
= 2V
(*)
80
120
I
C
= 4.5A, V
CE
= 2V
(*)
Transition frequency
f
T
215
MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
OBO
16.5
25
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
(d)
67.7
ns
V
CC
= 10V. I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time
t
(r)
72.2
ns
Storage time
t
(s)
361
ns
Fall time
t
(f)
63.9
ns