Diodes ZXTN25020DFL User Manual
Summary, Description, Features

© Zetex Semiconductors plc 2007
ZXTN25020DFL
20V, SOT23, NPN low power transistor
Summary
BV
CEX
> 100V
BV
CEO
> 20V
BV
ECO
> 5V
I
C(cont)
= 2A
I
CM
= 8A
V
CE(sat)
< 70mV @ 1A
R
CE(sat)
= 55m
⍀
P
D
= 350mW
Complementary part number ZXTP25020DFL
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
•
High peak current
•
Low saturation voltage
•
100V forward blocking voltage
Applications
•
MOSFET and IGBT gate driving
•
DC-DC conversion
•
LED driving
•
Interface between low voltage IC's and loads
Ordering information
Device marking
1A1
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN25020DFLTA
7
8
3,000
C
E
B
C
E
B
Pinout - top view
Table of contents
Document Outline
- ZXTN25020DFL
- 20V, SOT23, NPN low power transistor
- Summary
- Description
- Features
- Applications
- Ordering information
- Device marking
- Absolute maximum ratings
- Thermal resistance
- Characteristics
- Electrical characteristics (at Tamb = 25˚C unless otherwise stated)
- Typical characteristics
- Package outline - SOT23
- Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches