Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25020BFH User Manual
Page 4
ZXTN25020BFH
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
CBO
50
90
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
50
90
I
C
= 100
A, R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
20
27
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-base breakdown
voltage
BV
EBO
7
8
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
7
V
I
E
= 100
A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
3
4.7
V
I
E
= 100
A,
Collector-base cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 40V
V
CB
= 40V, T
amb
= 100°C
Collector-emitter cut-off current I
CEX
-
100
nA
V
CE
= 40V; R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
35
45
mV
I
C
= 1A, I
B
= 100mA
55
80
mV
I
C
= 1A, I
B
= 20mA
90
115
mV
I
C
= 2A, I
B
= 40mA
175
240
mV
I
C
= 4.5A, I
B
120
145
mV
I
C
= 4.5A, I
B
= 450mA
Base-emitter saturation voltage
V
BE(sat)
910
1000
mV
I
C
= 4.5A, I
B
Base-emitter turn-on voltage
V
BE(on)
825
900
mV
I
C
= 4.5A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
100
200
300
I
C
= 10mA, V
CE
= 2V
100
210
I
C
= 1A, V
CE
= 2V
75
160
I
C
= 4.5A, V
CE
= 2V
30
70
I
C
= 10A, V
CE
= 2V
Transition frequency
f
T
185
MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
OBO
22.7
30
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
87
ns
V
CC
= 10V.
I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time
t
r
119
ns
Storage time
t
s
146
ns
Fall time
t
f
61
ns