Diodes ZXTN23015CFH - Manual (Page 4)

ZXTN23015CFH
Issue 1 - February 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
60 85 V I
C
=100
␮A
Collector-emitter breakdown
voltage V
(BR)CEX
60 85 V I
C
=100
␮A,
R
BE
< 1k
⍀ OR
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage V
(BR)CEO
15 23 V
I
C
=10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300
␮
S. Duty cycle
Յ
2%.
Emitter-base breakdown voltage V
(BR)EBO
7.0 8.3 V I
E
=100 ␮A
Collector-emitter cut-off current I
CEX
- 100 nA V
CE
= 48V,
R
BE
< 1k
⍀ OR
-1V < V
BE
< 0.25V
Collector-base cut-off current I
CBO
<1 20 nA V
CB
=48V
Emitter-base cut-off current I
EBO
<1 10 nA V
EB
=6V
Static forward current transfer
ratio H
FE
160 300
I
C
=10mA, V
CE
=2V
(*)
200 350 560
I
C
=500mA, V
CE
=2V
(*)
190 330
I
C
=3A, V
CE
=2V
(*)
150 280
I
C
=6A, V
CE
=2V
(*)
Collector-emitter saturation
voltage V
CE(sat)
7 15 mV
I
C
=0.1A, I
B
=5mA
(*)
22 30 mV
I
C
=1A, I
B
=100mA
(*)
70 90 mV
I
C
=3A, I
B
=60mA
(*)
130 180 mV
I
C
=6A, I
B
=120mA
(*)
Base-emitter saturation voltage V
BE(sat)
0.83 0.93 V
I
C
=3A, I
B
=60mA
(*)
0.89 0.98 V
I
C
=6A, I
B
=120mA
(*)
Base-emitter turn-on voltage V
BE(on)
0.81 0.91 V
I
C
=6A, V
CE
=2V
(*)
Transition frequency f
T
235 MHz Ic=500mA, V
CE
=2V,
f=50MHz
Output capacitance C
obo
56 pF V
CB
=10V, f=1MHz
Delay time t
(d)
15 ns V
CC
=5V, I
C
=3A,
I
B1
=I
B2
=150mA Rise time t
(r)
38.5 ns
Storage time t
(stg)
213 ns
Fall time t
(f)
19.7 ns