Diodes ZXTN2005Z - Manual (Page 4)

ZXTN2005Z
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
60 120 V I
C
= 100 ␮A
Collector-emitter breakdown voltage BV
CER
60 120 V I
C
= 1 ␮A, RB Յ 1k⍀
Collector-emitter breakdown voltage BV
CEO
25 35 V I
C
= 10mA*
Emitter base breakdown voltage BV
EBO
7.0 8.1 V I
E
= 100 ␮A
Collector cut-off current I
CBO
20
0.5
nA
␮A
V
CB
= 50V
V
CB
= 50V, T
amb
=100 ЊC
Collector cut-off current I
CER
R Յ1k⍀
20
0.5
nA
␮A
V
CB
= 50V
V
CB
= 50V, T
amb
=100 ЊC
Emitter cut-off current I
EBO
10 nA V
EB
= 6V
Collector-emitter saturation voltage V
CE(SAT)
25
30
45
105
160
35
45
70
130
200
mV
mV
mV
mV
mV
I
C
= 500mA, I
B
= 10mA*
I
C
= 1A, I
B
= 100mA*
I
C
= 1A, I
B
= 10mA*
I
C
= 2A, I
B
= 10mA*
I
C
= 6.5A, I
B
= 150mA*
Base-emitter saturation voltage V
BE(SAT)
950 1050 mV I
C
= 6.5A, I
B
= 150mA*
Base-emitter turn on voltage V
BE(ON)
860 960 mV I
C
= 6.5A, V
CE
= 1V*
Static forward current transfer ratio h
FE
300
300
200
40
400
450
275
55
I
C
= 10mA, V
CE
= 1V*
I
C
= 1A, V
CE
= 1V*
I
C
= 7A, V
CE
= 1V*
I
C
= 20A, V
CE
= 1V*
Transition frequency f
T
150 I
C
= 100mA, V
CE
= 10V
f=50MHz
Output capacitance C
OBO
48 pF V
CB
= 10V, f= 1MHz*
Switching times t
ON
t
OFF
33
464
ns I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.